features high surge current capability stud cathode and stud anode version wide current range typical applications semiconductor rohs rohs page1of5 glass passivated standard recovery diodes n high power products ell voltage up to 1600v v rrm rohs compliant 25d(r)series (stud version), 25a do203aa(do4) battery charges converters power supplies machine tool controls product summary i f(av) 25a major ratings and characteristics parameter unit v v rrm i fsm i f(av) i t 2 t j 25 a s 2 a a oc test conditions values i f(rms) t c oc a 120 39 356 373 634 578 200to1600 65to175 50hz 60hz 50hz 60hz range electrical specifications voltage ratings voltage type number code v ,maximum rrm repetitive peak reverse voltage v v ,maximum rsm non-repetitive peak voltage v v ,mimimum r(br) avalanche voltage v (1) v ,maximum rrm at tj=175 c ma 25d(r) 02 04 06 08 10 12 16 200 400 600 800 1000 1200 1600 275 500 725 950 1200 1400 1800 500 750 950 1150 1350 12 (1) avalanche version only available from v 400v to 1600v rrm note 1750 glass passivated chips
semiconductor rohs rohs page2of5 n high power products ell forward conduction parameter symbol unit thermal and mechanical specifcations 25d(r)series test conditions values maximumaverageforwardcurrent atcasetemperature i f(av) 180 conduction,halfsinewave i f(rms) maximumrmsforwardcurrent 25 a 120 oc 39 k/w maximumonrepetitivepeak reversepower 10ssquarepulse,t =t maximum j j maximumpeak,onecycleforward, nonreptitivesurgecurrent i fsm t ms = 10 t ms = 8.3 t ms = 10 t ms = 8.3 t ms =10 t ms = 8.3 t ms =10 t ms =8.3 novoltage reapplied 100%v rrm reapplied novoltage reapplied 100%v rrm reapplied i t 2 sinusoidalhalfwave, initialt =t maximum j j 10 356 373 300 314 634 578 450 410 a s 2 a a 6337 t=0.1to10ms,novoltagereapplied i t 2 maximuml2tforfusing maximuml2 tforfusing maximumforwardvoltagedrop v fm 1.30 a s 2 v l =78a,t =25?c,t =400srectangularwave pk j p (1) avalanche only for avalanche version, all other paramet ers the same as 25d note parameter symbol units test conditions values maximumjunctionoperating temperaturerange maximumstoragetemperaturerange 65to175 65to200 oc 0.5 k/w maximumthermalresistace, junctiontocase maximumthermalresistance casetoheatsink 1.5 (13) (10) 6 0.21 (lbfin) nm allowablemountingtorque approximateweight casestyle do203aa(do4) t j t stg r thjc r thcs (lbfin) nm g oz. notlubricatedthreads lubricatedthreads mountingsurface,smooth,flatandgreased dcoperation seedimensionslinkattheendofdatasheet p r (1) 1.5 +0 10% 1.2 +0 10% ! r conduction thjc conduction angel sinusoidal conduction rectangular conduction units test conductions k/w 180? 120? 90 ? 60? 30? 0.28 0.39 0.50 0.73 1.20 0.24 0.41 0.54 0.75 1.21 t =t maximum j j ? the table above shows the increment of thermal resistance r when devices thjc note operate at different conduction angles than dc
semiconductor rohs rohs n high power products ell page3of5 25d(r)series maximum allowable case temperature(?c) 180 170 160 150 140 130 120 110 100 0 5 10 20 25 30 15 0 5 10 15 20 25 30 35 40 45 180 170 160 150 140 130 120 110 100 0 5 10 15 20 25 30 25 50 75 0 5 10 15 20 25 30 35 25d r series ! " r (dc)=1.5k/w thjc 25d r series ! " r (dc)=1.5k/w thjc 25d r series ! " conductionangle tj=175 c ? conductionangle rmslimit r = 1k/wdelta r thsa 2k/w 3k/w 4k/w 6k/w 8k/w 12k/w 20k/w 40k/w maximum average forward power loss (w) average forward current (a) average forward current (a) average forward current (a) maximum allowable ambient temperature (c) fig. 3 forward power loss characteristics fig.1 current ratings characteristics fig.2 current ratings characteristics 30 60 90 120 180 30 60 90 120 180 30 60 90 120 180 dc 100 125 150 175 maximum allowable case temperature(?c) conductionperiod 60 30 90 120 180 dc rmslimit rthsa = 4k/wdelta r conductionperiod 25d r series ! " t =175 j c 6k/w 8k/w 10k/w 15k/w 20k/w 30k/w maximum average forward power loss (w) fig. 4 forward power loss characteristics average forward current (a) maximum allowable ambient temperature (c) 5 0 25 10 20 25 30 15 75 50 100 0 5 10 15 20 25
page4of5 semiconductor rohs rohs n high power products ell 25d(r)series atanyratedloadconditionandwith atratedvrrmappliedfollowingsurge. initialtj=175c @60hz0.0083s @50hz0.0100s 25d r series ! " 25d r series ! " 25d r series ! " t =175 j c t =25 j c 25d r series ! " steadystatevalue rthjc=1.5k/w (dcoperation) maximumnonrepetitivesurgecurrent versuspulsetrainduration. initialtj=175c novoltagereapplied retedvrrmreapplied peak half sine wave forward current (a) instantaneous forward current (a) peak half sine wave forward current (a) transient thermal impedance zthjc (k/w) 150 fig. 5 maximum non-repetitive surge current fig. 7 forward voltage drop characterisics fig.6 maximum non-repetitive surge current fig.8 thermal impedance zthjc characteristics 1 10 100 50 100 200 250 300 350 1 10 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 0.01 0.1 1 10 0 50 100 150 200 250 300 350 400 10 1 0.1 0.01 0.001 1 0.1 10 numberofequalamplitudehalfcyclecurrentpulses(n) instantaneousforwardvoltage(v) pulse train duration (s) square wave pulse duration (s) ordering information table 1 current rating: code = i f(av) 2 d = standard recovery device 3 none = stud normal polarity (cathode to stud) 4 r = stud reverse polarity (anode to stud) device code d m 25 r 12 1 2 3 4 5 5 voltage code 100 = v (see voltage ratings table) rrm none = stud base do-203aa (do-4) #10-32 unf-2a m = stud base do-230aa (do-4) m5 0.8 (not available for avalanche diodes)
page5of5 semiconductor rohs rohs n high power products ell 25d(r)series (0.45/0.48) 11.6/12.4 10.6/11.2 (0.41/0.44) (0.02/0.04) 0.5/1.0 ?8.5/?8.9 (?0.33/?0.35) ?1.5/?1.7 ?0.05/?0.06 5.0/5.6 (0.19/0.22) 10/32 unf-2a for metric devices: m5 0.8 10.5/11.5 (0.41/0.45) 20.0/21.0 (0.78/0.82) 9.6/10.1 (0.37/0.39) 3.7/4.3 (0.14/0.16)
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